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Comparative Analysis of Standard Cells Performance for 7nm FinFET and 28nm CMOS Technologies with Considering for Parasitic Elements
Authors
 Ilin S.A.
 Ryzhova D.I.
 Korshunov A.V.
Date of publication
 2018
Type of work
 текст доклада на конференции
Library reference
 Ilin S.A., Ryzhova D.I., Korshunov A.V. Comparative Analysis of Standard Cells Performance for 7nm FinFET and 28nm CMOS Technologies with Considering for Parasitic Elements. IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (ElConRus). Saint Petersburg Electrotechn Univ LETI. RUSSIA, JAN 29-FEB 01, 2018. С. 1360-1363. DOI:10.1109/EIConRus.2018.8317349.
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