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Models and Methods of Inter-Gate Resynthesis at The Transistor Level for Nanoelectronic Circuits Based on Finfets
Authors
 Gavrilov S.V.
 Ryzhova D.I.
 Vasilyev N.O.
Date of publication
 2018
Type of work
 текст доклада на конференции
Library reference
 Gavrilov S.V., Ryzhova D.I., Vasilyev N.O. Models and Methods of Inter-Gate Resynthesis at The Transistor Level for Nanoelectronic Circuits Based on Finfets. IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (ElConRus). Saint Petersburg Electrotechn Univ LETI, RUSSIA, JAN 29-FEB 01, 2018. С. 1364-1367. DOI:10.1109/EIConRus.2018.8317350.
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