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Dependence of Temperature and Back-Gate Bias on Single-Event Upset Induced by Heavy Ion in 0.2-mkm DSOI CMOS Technology
Authors
 Yuchong Wang
 Fanyu Liu
 Bo Li
 Binhong Li
 Yang Huang
 Can Yang
 Junjun Zhang
 Guoqing Wang
 Jiajun Luo
 Zhengsheng Han
 Petrosyants K.O.
Date of publication
 2021
Type of work
 статья в научном журнале
Library reference
 Yuchong Wang, Fanyu Liu, Bo Li, Binhong Li, Yang Huang, Can Yang, Junjun Zhang, Guoqing Wang, Jiajun Luo, Zhengsheng Han, Petrosyants K.O. Dependence of Temperature and Back-Gate Bias on Single-Event Upset Induced by Heavy Ion in 0.2-mkm DSOI CMOS Technology. IEEE Transactions on Nuclear Science. 2021. Vol. 68. № 8. P. 1660-1667. doi 10.1109/TNS.2021.3094669.
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