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TCAD analysis of self-heating effects in bulk silicon and SOI n-MOSFETs
Authors
 Petrosyants K.O.
 Orekhov E.V.
 Kharitonov I.A.
 Popov D.A.
Date of publication
 2013
Type of work
 текст доклада на конференции
Library reference
 Petrosyants K.O., Orekhov E.V., Kharitonov I.A., Popov D.A. TCAD analysis of self-heating effects in bulk silicon and SOI n-MOSFETs. Proc. SPIE, International Conference Micro- and Nano-Electronics, 870016. 2013. Vol. 8700. P. 16.1-16.6. doi:10.1117/12.2017550.
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