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Modeling of mobility degradation in electron-irradiated SiGe p-type MOSFETs with different Ge concentration
Authors
 Orekhov E.V.
 Sambursky L.M.
 Torgovnikov R.A.
 Pugachev A.A.
Date of publication
 2014
Type of work
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Library reference
 Orekhov E.V., Sambursky L.M., Torgovnikov R.A., Pugachev A.A. Modeling of mobility degradation in electron-irradiated SiGe p-type MOSFETs with different Ge concentration. Int. Conf. “Micro- and Nanoelectronics– 2014" (ICMNE-2014). Proc. of SPIE, Oct. 2014. P. P2-24.
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